tic22 6 se ries silicon triacs 1 apri l 197 1 - r evi sed sep tem be r 2002 spe cification s ar e subjec t t o ch ang e withou t notice. 8 a rms glas s p ass iv ate d wa fer 400 v t o 800 v off-s tate voltage max i gt of 50 ma (q uadran ts 1 - 3) absolute maximu m rati ng s over op erati ng case temperat ure (un less otherwise no ted) notes: 1. these values apply bidirectiona ll y for any value o f resistance bet ween the ga te an d main terminal 1. 2. thi s value ap plie s for 50-hz full-sine-wave operation with resistive load . abo ve 85 c derate linearly to 110 c case t emperature at the rate o f 320 ma / c. 3. this valu e ap plie s for one 5 0-h z full-sine-wa ve whe n the d evice i s op erat ing at (or b el ow) t he rat ed value of on- state curr en t. surge ma y be repeat ed aft er the devi ce has ret ur ned to origi nal thermal equili bri um. d uri ng th e s urge , gate contro l ma y be lost. 4. thi s valu e applies fo r a m axi mum aver agi ng tim e o f 2 0 ms. rating symbol value un it repetiti ve pea k o ff -stat e vo ltage (see not e 1) TIC226d TIC226m ti c226s TIC226n v drm 400 600 700 800 v full-cycl e rms on-stat e curren t a t (or below) 85 c cas e temperature (see not e 2) i t(rms) 8 a peak on-stat e surg e current fu ll -sine-w ave a t (or be lo w) 25 c cas e temperatur e (see not e 3) i tsm 70 a peak gate current i gm 1 a peak gate po wer dissi pa tion a t (or be lo w) 85 c case temperatur e (puls e width 200 s) p gm 2.2 w averag e gat e po wer dissipat ion at (or below) 85c case tem pera ture (s ee n ote 4) p g(av) 0.9 w operatin g cas e tem pe rature range t c -40 t o +110 c storage temperatur e range t stg -40 t o +125 c lea d te mp erature 1.6 m m fr om case for 10 secon ds t l 230 c electrica l characteristics at 25c case tem peratu re (unless ot herwis e noted ) p ara meter tes t cond iti ons min ty p max un it i drm r ep etitiv e pe ak o ff -state current v d = rated v drm i g = 0 t c = 110c 2 ma i gt gat e trigger current v su pp ly = +1 2 v? v su pp ly = +1 2 v? v su pp ly = -1 2 v? v su pp ly = -1 2 v? r l = 10 r l = 10 r l = 10 r l = 10 t p(g) > 20 s t p(g) > 20 s t p(g) > 20 s t p(g) > 20 s 6 -12 -10 25 50 -50 -50 ma v gt gat e trigger voltage v su pp ly = +1 2 v? v su pp ly = +1 2 v? v su pp ly = -1 2 v? v su pp ly = -1 2 v? r l = 10 r l = 10 r l = 10 r l = 10 t p(g) > 20 s t p(g) > 20 s t p(g) > 20 s t p(g) > 20 s 0.7 -0.8 -0.8 0.9 2 -2 -2 2 v v t on-stat e volt ag e i t = 12 a i g = 5 0 ma (se e not e 5) 1.5 2.1 v ? al l voltag es ar e with re sp ec t to ma in termina l 1. mt1 mt2 g to-2 20 packa ge (t op vi ew) pi n 2 is in electrical contac t wi th t he m ou nti ng bas e. m dc 2aca 1 2 3 this series is currently available, but not recommended for new designs.
TIC226 series silicon triacs 2
april 1971 - revised september 2002 specifications are subject to change without notice. ? all voltages are with respect to main terminal 1. notes: 5. this parameter must be measured using pulse techniques, t p = 1 ms, duty cycle 2 %. voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. 6. the triacs are triggered by a 15-v (open-circuit amplitude) pulse supplied by a generator with the following characteristics: r g = 100 ? , t p(g) = 20 s, t r = 15 ns, f = 1 khz. i h holding current v supply = +12 v? v supply = -12 v? i g = 0 i g = 0 init? i tm = 100 ma init? i tm = -100 ma 10 -6 30 -30 ma i l latching current v supply = +12 v? v supply = -12 v? (see note 6) 50 -50 ma dv/dt critical rate of rise of off-state voltage v drm = rated v drm i g = 0 t c = 110c 100 v/s dv/dt (c) critical rise of commu- tation voltage v drm = rated v drm i trm = 12 a t c = 85c (see figure 7) 5 v/s thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1.8 c/w r ja junction to free air thermal resist ance 62.5 c/w typical characteristics figure 1. figure 2. electrical characteristics at 25c case temperature (unless otherwise noted) (continued) parameter test conditions min typ max unit gate trigger current t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 i gt - gate trigger current - ma 1 10 100 1000 tc01aa case temperature vs v aa = 12 v r l = 10 ? t p(g) = 20 s v supply i gtm + + + - - - - + gate trigger voltage t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 v gt - gate trigger voltage - v 01 1 10 tc01ab case temperature vs v aa = 12 v r l = 10 ? t p(g) = 20 s v supply i gtm + + + - - - - + }
TIC226 series silicon triacs 3
april 1971 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 3. figure 4. thermal information figure 5. figure 6. holding current t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 i h - holding current - ma 01 1 10 100 1000 tc01ad case temperature vs v supply + - v aa = 12 v i g = 0 initiating i tm = 100 ma latching current t c - case temperature - c -60 -40 -20 0 20 40 60 80 100 120 i l - latching current - ma 1 10 100 1000 tc01ae case temperature vs v aa = 12 v v supply i gtm + + + - - - - + max rms on-state current t c - case temperature - c 0 255075100125 i t(rms) - maximum on-state current - a 0 1 2 3 4 5 6 7 8 9 10 ti01ab case temperature vs max average power dissipated i t(rms) - rms on-state current - a 0246810121416 p (av) - maximum average power dissipated - w 0 4 8 12 16 20 24 28 32 ti01ac rms on-state current vs conduction angle = 360 above 8 a rms t j = 110 c see i tsm figure
TIC226 series silicon triacs 4
april 1971 - revised september 2002 specifications are subject to change without notice. parameter measurement information figure 7. v ac v mt2 i mt2 dut see note a r g c1 r1 i g v ac i mt2 v mt2 i g i trm dv/dt 10% 63% l1 v drm 50 hz pmc2aa note a: the gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. the pulse is timed so that the off-state-voltage duration is approximately 800 s.
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